| 1 |
Reactions of etched, single crystal (111)B-oriented InP to produce functionalized surfaces with low electrical defect densities
Sturzenegger M, Prokopuk N, Kenyon CN, Royea WJ, Lewis NS
Journal of Physical Chemistry B, 103(49), 10838, 1999 |
| 2 |
Behavior of Si Photoelectrodes Under High-Level Injection Conditions .1. Steady-State Current-Voltage Properties and Quasi-Fermi Level Positions Under Illumination
Tan MX, Kenyon CN, Kruger O, Lewis NS
Journal of Physical Chemistry B, 101(15), 2830, 1997 |
| 3 |
Behavior of Si Photoelectrodes Under High-Level Injection Conditions .2. Experimental Measurements and Digital Simulations of the Behavior of Quasi-Fermi Levels Under Illumination and Applied Bias
Kruger O, Kenyon CN, Tan MX, Lewis NS
Journal of Physical Chemistry B, 101(15), 2840, 1997 |
| 4 |
Behavior of Si Photoelectrodes Under High-Level Injection Conditions .3. Transient and Steady-State Measurements of the Quasi-Fermi Levels at Si/CH3OH Contacts
Kenyon CN, Tan MX, Kruger O, Lewis NS
Journal of Physical Chemistry B, 101(15), 2850, 1997 |
| 5 |
Efficient Reductive or Oxidative Current Flow Across 100 Mu-M Using an Si Photoelectrode Under High-Level Injection
Tan MX, Kenyon CN, Christian W, Wilisch A, Lewis NS
Journal of the Electrochemical Society, 142(4), L62, 1995 |
| 6 |
Experimental-Measurement of Quasi-Fermi Levels at an Illuminated Semiconductor/Liquid Contact
Tan MX, Kenyon CN, Lewis NS
Journal of Physical Chemistry, 98(19), 4959, 1994 |
| 7 |
Effects of Metal-Ion Chemisorption on GaAs Surface Recombination - Picosecond Luminescence Decay Measurements
Ryba GN, Kenyon CN, Lewis NS
Journal of Physical Chemistry, 97(51), 13814, 1993 |
