화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
Park MH, Lee YH, Kim HJ, Kim YJ, Moon T, Do Kim K, Muller J, Kersch A, Schroeder U, Mikolajick T, Hwang CS
Advanced Materials, 27(11), 1811, 2015
2 Determination of Ti+-flux and Ar+-flux of ionized physical vapor deposition of titanium from multiscale model calibration with test structures
Jacobs W, Kersch A, Ruf A, Urbansky N
Journal of Vacuum Science & Technology A, 21(4), 922, 2003
3 Atomistic feature scale modeling of the titanium ionized physical vapor deposition process
Kersch A, Hansen U
Journal of Vacuum Science & Technology A, 20(4), 1284, 2002
4 Thermal modelling of RTP and RTCVD processes
Kersch A, Schafbaur T
Thin Solid Films, 365(2), 307, 2000
5 A Gas-Phase and Surface Kinetics Model for Silicon Epitaxial-Growth with Sih2Cl2 in an Rtcvd Reactor
Hierlemann M, Kersch A, Werner C, Schafer H
Journal of the Electrochemical Society, 142(1), 259, 1995