화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics
Hahn H, Achenbach J, Ketteniss N, Noculak A, Kalisch H, Vescan A
Solid-State Electronics, 67(1), 90, 2012
2 The role of strain in controlling the surface morphology of AlxGa1-xN following in situ treatment with SiH4 and NH3
Ketteniss N, Oliver RA, McAleese C, Kappers MJ, Zhang Y, Humphreys CJ
Applied Surface Science, 254(7), 2124, 2008