검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Influence of the crystal thickness on the SiCPVT growth rate Cherednichenko D, Khlebnikov Y, Drachev RV, Khlebnikov II, Sudarshan TS Materials Science Forum, 389-3, 95, 2002 |
| 2 |
Aluminum and boron diffusion into (1100) face SiC substrates Soloviev SI, Gao Y, Khlebnikov Y, Khlebnikov II, Sudarshan TS Materials Science Forum, 389-3, 557, 2002 |
| 3 |
Graphitization of the seeding surface during the heating stage of SiCPVT bulk growth Drachev RV, Cherednichenko DI, Khlebnikov II, Khlebnikov YI, Sudarshan TS Materials Science Forum, 433-4, 99, 2002 |
| 4 |
Liquid phase silicon at the front of crystallization during SiCPVT growth Drachev RV, Straty GD, Cherednichenko DI, Khlebnikov II, Sudarshan TS Journal of Crystal Growth, 233(3), 541, 2001 |
| 5 |
An analytical study of the SiC growth process from vapor phase Cherednichenko DI, Khlebnikov YI, Khlebnikov II, Soloviev SI, Sudarshan TS Materials Science Forum, 338-3, 35, 2000 |
| 6 |
Selective doping of 6H-SiC by diffusion of boron Soloviev S, Gao Y, Khlebnikov II, Sudarshan TS Materials Science Forum, 338-3, 945, 2000 |