검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
III-V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond Datta K, Khosru QDM Solid-State Electronics, 118, 66, 2016 |
| 2 |
Low-temperature formation of highly reliable silicon-nitride gate dielectrics with suppressed soft-breakdown phenomena for advanced complementary metal-oxide-semiconductor technology Nakajima A, Khosru QDM, Yoshimoto T, Kidera T, Yokoyama S Journal of Vacuum Science & Technology B, 20(4), 1406, 2002 |
| 3 |
High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations Khosru QDM, Nakajima A, Yoshimoto T, Yokoyama S Solid-State Electronics, 46(10), 1659, 2002 |