검색결과 : 26건
| No. | Article |
|---|---|
| 1 |
28 nm FDSOI analog and RF Figures of Merit at N-2 cryogenic temperatures Esfeh BK, Planes N, Haond M, Raskin JP, Flandre D, Kilchytska V Solid-State Electronics, 159, 77, 2019 |
| 2 |
An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models Pereira ASN, de Steel G, Planes N, Haond M, Giacomini R, Flandre D, Kilchytska V Solid-State Electronics, 128, 67, 2017 |
| 3 |
RF SOI CMOS technology on 1st and 2nd generation trap-rich high resistivity SOI wafers Esfeh BK, Makovejev S, Basso D, Desbonnets E, Kilchytska V, Flandre D, Raskin JP Solid-State Electronics, 128, 121, 2017 |
| 4 |
Comparison of self-heating and its effect on analogue performance in 28 nm bulk and FDSOI Makovejev S, Planes N, Haond M, Flandre D, Raskin JP, Kilchytska V Solid-State Electronics, 115, 219, 2016 |
| 5 |
A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling Rudenko T, Nazarov A, Kilchytska V, Flandre D Solid-State Electronics, 117, 66, 2016 |
| 6 |
Assessment of 28 nm UTBB FD-SOI technology platform for RF applications: Figures of merit and effect of parasitic elements Esfeh BK, Kilchytska V, Barral V, Planes N, Haond M, Flandre D, Raskin JP Solid-State Electronics, 117, 130, 2016 |
| 7 |
Wide frequency band assessment of 28 nm FDSOI technology platform for analogue and RF applications Makovejev S, Esfeh BK, Barral V, Planes N, Haond M, Flandre D, Raskin JP, Kilchytska V Solid-State Electronics, 108, 47, 2015 |
| 8 |
Trigate nanowire MOSFETs analog figures of merit Kilchytska V, Makovejev S, Barraud S, Poiroux T, Raskin JP, Flandre D Solid-State Electronics, 112, 78, 2015 |
| 9 |
Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit Arshad MKM, Kilchytska V, Emam M, Andrieu F, Flandre D, Raskin JP Solid-State Electronics, 97, 38, 2014 |
| 10 |
On the g(m)/I-D-based approaches for threshold voltage extraction in advanced MOSFETs and their application to ultra-thin body SOI MOSFETs Rudenko T, Arshad MKM, Raskin JP, Nazarov A, Flandre D, Kilchytska V Solid-State Electronics, 97, 52, 2014 |