검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy Hageman PR, Kirilyuk V, Corbeek WHM, Weyher JL, Lucznik B, Bockowski M, Porowski S, Muller S Journal of Crystal Growth, 255(3-4), 241, 2003 |
| 2 |
Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates Kirilyuk V, Zauner ARA, Christianen PCM, Weyher JL, Hageman PR, Larsen PK Journal of Crystal Growth, 230(3-4), 477, 2001 |
| 3 |
Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation Zauner ARA, Weyher JL, Plomp M, Kirilyuk V, Grzegory I, van Enckevort WJP, Schermer JJ, Hageman PR, Larsen PK Journal of Crystal Growth, 210(4), 435, 2000 |