검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Substrate current characterization and optimization of high voltage LDMOS transistors Wang J, Li R, Dong YM, Zou X, Shao L, Shiau WT Solid-State Electronics, 52(6), 886, 2008 |
| 2 |
Temperature dependence of electron saturation velocity in GaAs measured in InGaP/GaAs HBT using DC and AC approaches Hsin YM, Tang WB, Hsu HT Solid-State Electronics, 49(3), 295, 2005 |
| 3 |
An accurate and compact large signal model for III-VHBT devices Issaoun A, Ghannouchi FM, Kouki AB Solid-State Electronics, 49(12), 1909, 2005 |
| 4 |
Trade-off between the Kirk effect and the breakdown performance in resurfed lateral bipolar transistors for high voltage, high frequency applications Cao GJ, De Souza MM, Narayanan EMS Solid-State Electronics, 44(10), 1869, 2000 |