화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 RIPK1 maintains epithelial homeostasis by inhibiting apoptosis and necroptosis
Dannappel M, Vlantis K, Kumari S, Polykratis A, Kim C, Wachsmuth L, Eftychi C, Lin J, Corona T, Hermance N, Zelic M, Kirsch P, Basic M, Bleich A, Kelliher M, Pasparakis M
Nature, 513(7516), 90, 2014
2 Investigation of process-induced performance variability and optimization of the 10 nm technology node Si bulk FinFETs
Baek RH, Kang CY, Sohn CW, Kim DM, Kirsch P
Solid-State Electronics, 96, 27, 2014
3 Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric
Min KS, Park C, Kang CY, Park CS, Park BJ, Kim YW, Lee BH, Lee JC, Bersuker G, Kirsch P, Jammy R, Yeom GY
Solid-State Electronics, 82, 82, 2013
4 Improvement of metal gate/high-k dielectric CMOSFETs characteristics by neutral beam etching of metal gate
Min KS, Park C, Kang CY, Park CS, Park BJ, Kim YW, Lee BH, Lee JC, Bersuker G, Kirsch P, Jammy R, Yeom GY
Solid-State Electronics, 86, 75, 2013
5 City living and urban upbringing affect neural social stress processing in humans
Lederbogen F, Kirsch P, Haddad L, Streit F, Tost H, Schuch P, Wust S, Pruessner JC, Rietschel M, Deuschle M, Meyer-Lindenberg A
Nature, 474(7352), 498, 2011
6 FADD prevents RIP3-mediated epithelial cell necrosis and chronic intestinal inflammation
Welz PS, Wullaert A, Vlantis K, Kondylis V, Fernandez-Majada V, Ermolaeva M, Kirsch P, Sterner-Kock A, van Loo G, Pasparakis M
Nature, 477(7364), 330, 2011
7 Grain boundary-driven leakage path formation in HfO2 dielectrics
Bersuker G, Yum J, Vandelli L, Padovani A, Larcher L, Iglesias V, Porti M, Nafria M, McKenna K, Shluger A, Kirsch P, Jammy R
Solid-State Electronics, 65-66, 146, 2011
8 Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors
Oh J, Huang J, Chen YT, Ok I, Jeon K, Lee SH, Sassman B, Loh WY, Lee HD, Ko DH, Majhi P, Kirsch P, Jammy R
Thin Solid Films, 520(1), 442, 2011
9 Morphology and crystallization of ultrathin HfON, (EOT <= 1 nm) with TiN metal gate - Impact on electron mobility
Song SC, Sim JH, Zhang Z, Bae SH, Kirsch P, Bersuker G, Lee BH
Electrochemical and Solid State Letters, 9(3), G77, 2006
10 Integration issues of high-k and metal gate into conventional CMOS technology
Song SC, Zhang Z, Huffman C, Bae SH, Sim JH, Kirsch P, Majhi P, Moumen N, Lee BH
Thin Solid Films, 504(1-2), 170, 2006