검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor Chowdhury I, Chandrasekhar MVS, Klein PB, Caldwell JD, Sudarshan T Journal of Crystal Growth, 316(1), 60, 2011 |
| 2 |
GaN single crystals of different habit grown from solution at near atmospheric pressure Feigelson BN, Hite JK, Garces NY, Freitas JA, Tischler JG, Klein PB Journal of Crystal Growth, 312(18), 2551, 2010 |
| 3 |
The effect of thermally induced stress on device temperature measurements by Raman spectroscopy Kim J, Freitas JA, Klein PB, Jang S, Ren F, Pearton SJ Electrochemical and Solid State Letters, 8(12), G345, 2005 |
| 4 |
High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition Lu P, Edgar JH, Glembocki OJ, Klein PB, Glaser ER, Perrin J, Chaudhuri J Journal of Crystal Growth, 285(4), 506, 2005 |