검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Synchrotron topography and X-ray diffraction study of GaInP layers grown on GaAs/Ge Lankinen A, Knuuttila L, Kostamo P, Tuomi TO, Lipsanen H, McNally PJ, O'Reilly L Journal of Crystal Growth, 311(22), 4619, 2009 |
| 2 |
Comparison of H-2 and N-2 as carrier gas in MOVPE growth of InGaAsN quantum wells Reentila O, Mattila M, Knuuttila L, Hakkarainen T, Soparlen M, Lipsanen H Journal of Crystal Growth, 298, 536, 2007 |
| 3 |
Synchrotron X-ray topographic study of dislocations and stacking faults in InAs Lankinen A, Tuomi T, Riikonen J, Knuuttila L, Lipsanen H, Sopanen M, Danilewsky A, McNally PJ, O'Reilly L, Zhilyaev Y, Fedorov L, Sipila H, Vaijarvi S, Simon R, Lumb D, Owens A Journal of Crystal Growth, 283(3-4), 320, 2005 |
| 4 |
Self-assembled In(Ga) as islands on Ge substrate Knuuttila L, Korkala T, Sopanen M, Lipsanen H Journal of Crystal Growth, 272(1-4), 221, 2004 |
| 5 |
Synchrotron X-ray topography of undoped VCz GaAs crystals Tuomi T, Knuuttila L, Riikonen J, McNally PJ, Chen WM, Kanatharana J, Neubert M, Rudolph P Journal of Crystal Growth, 237, 350, 2002 |
| 6 |
Determination of crystal misorientation in epitaxial lateral overgrowth of GaN Chen WM, McNally PJ, Jacobs K, Tuomi T, Danilewsky AN, Zytkiewicz ZR, Lowney D, Kanatharana J, Knuuttila L, Riikonen J Journal of Crystal Growth, 243(1), 94, 2002 |