검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Studies of ammonia dissociation during the gas source molecular-beam epitaxial growth of III nitrides Wicks GW, Koch MW, Pedrazzani JR Journal of Vacuum Science & Technology B, 23(3), 1186, 2005 |
| 2 |
Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy Averett KL, Wu X, Koch MW, Wicks GW Journal of Crystal Growth, 251(1-4), 852, 2003 |
| 3 |
InAs-based bipolar transistors grown by molecular beam epitaxy Averett KL, Maimon S, Wu X, Koch MW, Wicks GW Journal of Vacuum Science & Technology B, 20(3), 1213, 2002 |
| 4 |
Molecular beam epitaxy growth of boron-containing nitrides Gupta VK, Wamsley CC, Koch MW, Wicks GW Journal of Vacuum Science & Technology B, 17(3), 1246, 1999 |
| 5 |
Native oxides and regrowth on III-N surfaces Gupta VK, Wamsley CC, Koch MW, Wicks GW Journal of Vacuum Science & Technology B, 17(3), 1249, 1999 |
| 6 |
Analysis of Cracking Efficiency of an Atomic-Hydrogen Source, and Its Effect on Desorption of AlxGa1-xAs Native Oxides Wicks GW, Rueckwald ER, Koch MW Journal of Vacuum Science & Technology B, 14(3), 2184, 1996 |
| 7 |
Solid Source Molecular-Beam Epitaxy of GaInAsP/InP - Growth Mechanisms and Machine Operation Wamsley CC, Koch MW, Wicks GW Journal of Vacuum Science & Technology B, 14(3), 2322, 1996 |
| 8 |
Operation of a Molecular-Beam Epitaxy Machine Employing a Valved Solid Phosphorus Source Wicks GW, Koch MW, Johnson FG, Varriano JA, Kohnke GE, Colombo P Journal of Vacuum Science & Technology B, 12(2), 1119, 1994 |