| 1 |
Area selective epitaxy of indium phosphide on silicon (100) substrates without buffer layers by liquid phase epitaxy
Kochiya T, Oyama Y, Sugai M, Nishizawa JI
Thin Solid Films, 515(11), 4838, 2007 |
| 2 |
Dislocation-free large area InP ELO layers by liquid phase epitaxy
Kochiya T, Oyama Y, Kimura T, Suto K, Nishizawa J
Journal of Crystal Growth, 281(2-4), 263, 2005 |
| 3 |
Anisotropy of lateral growth rate in liquid phase epitaxy of InP and its association with kink-step structures on the surface
Kochiya T, Oyama Y, Suto K, Nishizawa J
Applied Surface Science, 237(1-4), 235, 2004 |
| 4 |
Anisotropy of lateral growth rate in liquid phase epitaxy of {001} InP
Kochiya T, Oyama Y, Suto K, Nishizawa JI
Applied Surface Science, 216(1-4), 78, 2003 |
| 5 |
Angular dependence of lateral growth rate on the InP (111)A,B surface by liquid-phase epitaxy
Oyama Y, Kochiya T, Suto K, Nishizawa JI
Journal of Crystal Growth, 258(1-2), 41, 2003 |
| 6 |
Determination of angular dependence of lateral growth rate in liquid phase epitaxy of (001) InP
Oyama Y, Kochiya T, Suto K, Nishizawa J
Journal of Crystal Growth, 243(2), 267, 2002 |
| 7 |
Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes
Oyama Y, Kochiya T, Suto K, Nishizawa J
Journal of Crystal Growth, 245(3-4), 181, 2002 |
