| 1 |
Charge transient spectroscopy measurements of GaAs metal-insulator-semiconductor structures
Kochowski S, Szydlowski M, Thurzo I, Zahn DRT
Applied Surface Science, 252(21), 7631, 2006 |
| 2 |
Studies of GaAs metal-insulator-semiconductor structures by the admittance spectroscopy method
Kochowski S, Nitsch K, Paszkiewicz B, Paszkiewicz R, Szydlowski M
Applied Surface Science, 235(3), 389, 2004 |
| 3 |
Characterization of the interface and the bulk phenomena in metal-SiO2-(n) GaAs structure by analysis of the equivalent circuit parameters at different temperatures
Kochowski S, Nitsch K, Paszkiewicz B, Paszkiewicz R
Thin Solid Films, 467(1-2), 190, 2004 |
| 4 |
Two constant phase element behaviour of the admittance characteristics of GaAs metal-insulator-semiconductor structure with deep traps
Kochowski S, Nitsch K, Paszkiewicz B, Paszkiewicz R
Thin Solid Films, 444(1-2), 208, 2003 |
| 5 |
Description of the frequency behaviour of metal-SiO2-GaAs structure characteristics by electrical equivalent circuit with constant phase element
Kochowski S, Nitsch K
Thin Solid Films, 415(1-2), 133, 2002 |
| 6 |
Electrical properties of SiO2-(n) GaAs interface on the basis of measurements of MIS structure capacitance and conductance
Kochowski S, Nitsch K, Paszkiewicz R
Thin Solid Films, 348(1-2), 180, 1999 |
