검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Organometallic vapor phase epitaxy of GaN on Si(111) with a gamma-Al2O3(111) epitaxial intermediate layer Wakahara A, Oishi H, Okada H, Yoshida A, Koji Y, Ishida M Journal of Crystal Growth, 236(1-3), 21, 2002 |
| 2 |
Effect of Al pre-deposition layer on the epitaxial growth of silicon on Al2O3/Si (111) substrates Ishida M, Jung YC, Miura H, Koji Y, Sawada K, Yoshimoto M, Keisuke M, Takahumi M, Hideaki M Thin Solid Films, 369(1-2), 134, 2000 |