검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device Miyamoto Y, Kokubo A, Oguchi H, Kurahashi M, Furuya K Applied Surface Science, 159, 179, 2000 |
| 2 |
25 nm pitch GaInAs/InP buried structure: Improvement by calixarene as an electron beam resist and tertiarybutylphosphine as a P source in organometallic vapor phase epitaxy regrowth Miyamoto Y, Kokubo A, Hattori T, Hongo H, Suhara M, Furuya K Journal of Vacuum Science & Technology B, 16(6), 3894, 1998 |