검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method Usuda K, Tezuka T, Kosemura D, Tomita M, Ogura A Solid-State Electronics, 83, 46, 2013 |
| 2 |
Evaluation and Control of Strain in Si Induced by Patterned SiN Stressor Ogura A, Saitoh H, Kosemura D, Kakemura Y, Yoshida T, Takei M, Koganezawa T, Hirosawa I, Kohno M, Nishita T, Nakanishi T Electrochemical and Solid State Letters, 12(4), H117, 2009 |
| 3 |
Evaluation of Si3N4/Si interface by UV Raman spectroscopy Ogura A, Yoshida T, Kosemura D, Kakemura Y, Aratani T, Higuchi M, Sugawa S, Teramoto A, Ohmi T, Hattori T Applied Surface Science, 254(19), 6229, 2008 |
| 4 |
Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate Ogura A, Yoshida T, Kosemura D, Kakemura Y, Takei M, Saito H, Shimura T, Koganesawa T, Hirosawa I Solid-State Electronics, 52(12), 1845, 2008 |
| 5 |
Measurement of in-plane and depth strain profiles in strained-Si substrates Ogura A, Kosemura D, Yamasaki K, Tanaka S, Kakemura Y, Kitano A, Hirosawa I Solid-State Electronics, 51(2), 219, 2007 |