검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Adsorption of the NH3, NO, NO2, CO2, and CO gas molecules on blue phosphorene: A first-principles study Safari F, Moradinasab M, Fathipour M, Kosina H Applied Surface Science, 464, 153, 2019 |
| 2 |
Consistent low-field mobility modeling for advanced MOS devices Stanojevic Z, Baumgartner O, Filipovic L, Kosina H, Karner M, Kernstock C, Prause P Solid-State Electronics, 112, 37, 2015 |
| 3 |
Bandstructure and mobility variations in p-type silicon nanowires under electrostatic gate field Neophytou N, Baumgartner O, Stanojevic Z, Kosina H Solid-State Electronics, 90, 44, 2013 |
| 4 |
Subband engineering in n-type silicon nanowires using strain and confinement Stanojevic Z, Sverdlov V, Baumgartner O, Kosina H Solid-State Electronics, 70, 73, 2012 |
| 5 |
Confinement-induced carrier mobility increase in nanowires by quantization of warped bands Neophytou N, Kosina H Solid-State Electronics, 70, 81, 2012 |
| 6 |
Graphene-Based Antidots for Thermoelectric Applications Karamitaheri H, Pourfath M, Pazoki M, Faez R, Kosina H Journal of the Electrochemical Society, 158(12), K213, 2011 |
| 7 |
Integration of MOSFETs with SiGe dots as stressor material Nanver LK, Jovanovic V, Biasotto C, Moers J, Grutzmacher D, Zhang JJ, Hrauda N, Stoffel M, Pezzoli F, Schmidt OG, Miglio L, Kosina H, Marzegalli A, Vastola G, Mussler G, Stangl J, Bauer G, van der Cingel J, Bonera E Solid-State Electronics, 60(1), 75, 2011 |
| 8 |
Strained MOSFETs on ordered SiGe dots Cervenka J, Kosina H, Selberherr S, Zhang JJ, Hrauda N, Stangl J, Bauer G, Vastola G, Marzegalli A, Montalenti F, Miglio L Solid-State Electronics, 65-66, 81, 2011 |
| 9 |
Electron subband structure in strained silicon UTB films from the Hensel-Hasegawa-Nakayama model - Part 2 efficient self-consistent numerical solution of the k . p schrodinger equation Baumgartner O, Karner M, Sverdlov V, Kosina H Solid-State Electronics, 54(2), 143, 2010 |
| 10 |
Two-band k center dot p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility Sverdlov V, Karlowatz G, Dhar S, Kosina H, Selberherr S Solid-State Electronics, 52(10), 1563, 2008 |