화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride (vol 256, pg 7434, 2010)
Bosund M, Mattila P, Aierken A, Hakkarainen T, Koskenvaara H, Sopanen M, Airaksinen VM, Lipsanen H
Applied Surface Science, 257(6), 2412, 2011
2 GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
Bosund M, Mattila P, Aierken A, Hakkarainen T, Koskenvaara H, Sopanen M, Airaksinen VM, Lipsanen H
Applied Surface Science, 256(24), 7434, 2010
3 Growth of InN by vertical flow MOVPE
Suihkonen S, Sormunen J, Rangel-Kuoppa VT, Koskenvaara H, Sopanen M
Journal of Crystal Growth, 291(1), 8, 2006
4 Passivation of GaAs surface by ultrathin epitaxial GaN layer
Riikonen J, Sormunen J, Koskenvaara H, Mattila M, Sopanen M, Lipsanen H
Journal of Crystal Growth, 272(1-4), 621, 2004