화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Large reduction of leakage currents in AlGaN Schottky diodes by a surface control process and its mechanism
Kotani J, Kaneko M, Hasegawa H, Hashizume T
Journal of Vacuum Science & Technology B, 24(4), 2148, 2006
2 Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure
Matsuo K, Negoro N, Kotani J, Hashizume T, Hasegawa H
Applied Surface Science, 244(1-4), 273, 2005
3 Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors
Kotani J, Kasai S, Hashizume T, Hasegawa H
Journal of Vacuum Science & Technology B, 23(4), 1799, 2005
4 Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model
Kotani J, Hasegawa H, Hashizume T
Applied Surface Science, 237(1-4), 213, 2004
5 Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model
Kotani J, Hashizume T, Hasegawa H
Journal of Vacuum Science & Technology B, 22(4), 2179, 2004
6 Role of Raf-1 conserved region 2 in regulation of Ras-dependent Raf-1 activation
Sendoh H, Hu CD, Wu DM, Song CH, Yamawaki-Kataoka Y, Kotani J, Okada T, Shima F, Kariya K, Kataoka T
Biochemical and Biophysical Research Communications, 271(3), 596, 2000
7 Silicon-based interpenetrating polymer networks (IPNs) : Synthesis and properties
Tsumura M, Ando K, Kotani J, Hiraishi M, Iwahara T
Macromolecules, 31(9), 2716, 1998
8 Synthesis of Sequence-Ordered Polysilane by Anionic Ring-Opening Polymerization of Phenylnonamethylcyclopentasilane
Suzuki M, Kotani J, Gyobu S, Kaneko T, Saegusa T
Macromolecules, 27(8), 2360, 1994