검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Interface properties of MBE-grown MOS structures with InGaAs/InAlAs buried channel and in-situ high-k oxide Oktyabrsky S, Tokranov V, Koveshnikov S, Yakimov M, Kambhampati R, Bakhru H, Moore R, Tsai W Journal of Crystal Growth, 311(7), 1950, 2009 |
| 2 |
Metal gate HfO2 metal-oxide-semiconductor structures on InGaAs substrate with varying Si interface passivation layer and postdeposition anneal condition Ok I, Kim H, Zhang M, Zhu F, Park S, Yum J, Koveshnikov S, Tsai W, Tokranov V, Yakimov M, Oktyabrsky S, Lee JC Journal of Vacuum Science & Technology B, 25(4), 1491, 2007 |
| 3 |
Test methods for measuring bulk copper and nickel in heavily doped p-type silicon wafers Fabry L, Hoelzl R, Andrukhiv A, Matsumoto K, Qiu J, Koveshnikov S, Goldstein M, Grabau A, Horie H, Takeda R Journal of the Electrochemical Society, 153(6), G566, 2006 |
| 4 |
Lateral gettering of Fe on bulk and silicon-on-insulator wafers Beaman KL, Kononchuk O, Koveshnikov S, Osburn CM, Rozgonyi GA Journal of the Electrochemical Society, 146(5), 1925, 1999 |