검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Direct experimental comparison of the effects of electron irradiation on the charge carrier removal rate in n-type silicon and silicon carbide Kozlovski VV, Bogdanova EV, Emtsev VV, Emtsev KV, Lebedev AA, Lomasov VN Materials Science Forum, 483, 385, 2005 |
| 2 |
Influence of irradiation on excess currents in SiC pn structures Stre'chuk AM, Kozlovski VV, Lebedev AA, Smirnova NY Materials Science Forum, 483, 1001, 2005 |
| 3 |
Investigation of the SiC transistor and diode nuclear detectors at 8 MeV proton irradiation Strokan NB, Ivanov AM, Savkina NS, Lebedev AA, Kozlovski VV, Syvajarvi M, Yakimova R Materials Science Forum, 483, 1025, 2005 |
| 4 |
Modification of the Silicon Carbide by proton irradiation Bogdanova EV, Kozlovski VV, Rumyantsev DS, Volkova AA, Lebedev AA Materials Science Forum, 457-460, 817, 2004 |
| 5 |
Radiation hardness of silicon carbide Lebedev AA, Kozlovski VV, Strokan NB, Davydov DV, Ivanov AM, Strel'chuk AM, Yakimova R Materials Science Forum, 433-4, 957, 2002 |
| 6 |
Investigation of 3C-SiC epitaxial layers grown by sublimation epitaxy Davydov DV, Lebedev AA, Tregubova AS, Kozlovski VV, Kuznetsov AN, Bogdanova EV Materials Science Forum, 338-3, 221, 2000 |
| 7 |
Deep centres appearing in 6H and 4H SiC after proton irradiation Lebedev AA, Davydov DV, Strel'chuk AM, Kuznetsov AN, Bogdanova EV, Kozlovski VV, Savkina NS Materials Science Forum, 338-3, 973, 2000 |