검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Electrical behaviour of Al/SiO2/Si structures with SiC nanocrystals Horvath ZJ, Dozsa L, Krafcsik OH, Mohacsy T, Vida G Applied Surface Science, 234(1-4), 67, 2004 |
| 2 |
Growth of epitaxial beta-SiC at the SiO2/Si interface as a result of annealing in CO Krafcsik OH, Josepovits KV, Toth L, Pecz B, Deak P Journal of the Electrochemical Society, 149(4), G297, 2002 |
| 3 |
Void-free epitaxial growth of cubic SiC crystallites during CO heat treatment of oxidized silicon Krafcsik OH, Vida G, Josepovits KV, Deak P, Radnoczi GZ, Pecz B, Barsony I Materials Science Forum, 389-3, 359, 2002 |
| 4 |
Dissolution mechanism of the carbon islands at the SiO(2)-SiC interface Krafcsik OH, Josepovits KV, Deak P Materials Science Forum, 353-356, 659, 2001 |
| 5 |
Impedance spectroscopic and secondary ion mass spectrometric studies of beta-Ga2O3/O-2 interaction Kiss G, Krafcsik OH, Kovacs K, Josepovits VK, Fleischer M, Meixner H, Deak P, Reti F Thin Solid Films, 391(2), 239, 2001 |