화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Measuring in Situ Length Distributions of Polymer-Wrapped Monochiral Single-Walled Carbon Nanotubes Dispersed in Toluene with Analytical Ultracentrifugation
Selvasundaram PB, Kraft R, Li WS, Fischer R, Kappes MM, Hennrich F, Krupke R
Langmuir, 35(10), 3790, 2019
2 The Na+/Ca2+ exchange inhibitor KB-R7943 potently blocks TRPC channels
Kraft R
Biochemical and Biophysical Research Communications, 361(1), 230, 2007
3 Sulfur oxidation in Paracoccus pantotrophus: interaction of the sulfur-binding protein SoxYZ with the dimanganese SoxB protein
Quentmeier A, Hellwig P, Bardischewsky F, Grelle G, Kraft R, Friedrich CG
Biochemical and Biophysical Research Communications, 312(4), 1011, 2003
4 Modeling and optimization of oxynitride gate dielectrics formation by remote plasma nitridation of silicon dioxide
Kapila D, Hattangady S, Douglas M, Kraft R, Gribelyuk M
Journal of the Electrochemical Society, 146(3), 1111, 1999
5 ICOS is an inducible T-cell co-stimulator structurally and functionally related to CD28
Hutloff A, Dittrich AM, Beier KC, Eljaschewitsch B, Kraft R, Anagnostopoulos I, Kroczek RA
Nature, 397(6716), 263, 1999
6 Oxide loss at the gate periphery during high density plasma etching
Kraft R, Gupta I, Kinoshita T
Journal of Vacuum Science & Technology B, 16(2), 496, 1998
7 Surface Nitridation of Silicon Dioxide with a High-Density Nitrogen Plasma
Kraft R, Schneider TP, Dostalik WW, Hattangady S
Journal of Vacuum Science & Technology B, 15(4), 967, 1997
8 Etching 0.35 Mu-M Polysilicon Gates on a High-Density Helicon Etcher
Kraft R, Boonstra T, Prengle S
Journal of Vacuum Science & Technology B, 14(1), 543, 1996
9 Gate Oxide Loss at the Periphery of a Metal-Oxide-Semiconductor Field-Effect Transistor Resulting from a Polysilicon Gate Etch with a Helicon Etch Tool
Kraft R, Krishnan S
Journal of Vacuum Science & Technology B, 13(6), 2226, 1995