| 1 |
Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations
Kratzer P, Penev E, Scheffler M
Applied Surface Science, 216(1-4), 436, 2003 |
| 2 |
Effect of the cluster size in modeling the H-2 desorption and dissociative adsorption on Si(001)
Penev E, Kratzer P, Scheffler M
Journal of Chemical Physics, 110(8), 3986, 1999 |
| 3 |
Reaction Dynamics of Atomic-Hydrogen with the Hydrogenated Si(001) (2X1) Surface
Kratzer P
Journal of Chemical Physics, 106(16), 6752, 1997 |
| 4 |
Designing Surface Alloys with Specific Active-Sites
Holmblad PM, Larsen JH, Chorkendorff I, Nielsen LP, Besenbacher F, Stensgaard I, Laegsgaard E, Kratzer P, Hammer B, Norskov JK
Catalysis Letters, 40(3-4), 131, 1996 |
| 5 |
D-2 Dissociative Adsorption on and Associative Desorption from Si(100) - Dynamic Consequences of an Ab-Initio Potential-Energy Surface
Luntz AC, Kratzer P
Journal of Chemical Physics, 104(8), 3075, 1996 |
| 6 |
A Theoretical-Study of CH4 Dissociation on Pure and Gold-Alloyed Ni(111) Surfaces
Kratzer P, Hammer B, Norskov JK
Journal of Chemical Physics, 105(13), 5595, 1996 |
