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| No. | Article |
|---|---|
| 1 |
MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 mu m Zikova M, Hospodkova A, Pangrac J, Oswald J, Krcil P, Hulicius E, Komninou P, Kioseoglou J Journal of Crystal Growth, 414, 167, 2015 |