화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Antimonide-based compound semiconductors for electronic devices: A review
Bennett BR, Magno R, Boos JB, Kruppa W, Ancona MG
Solid-State Electronics, 49(12), 1875, 2005
2 Low-frequency noise characteristics of AlSb/InAsSb HEMTs
Kruppa W, Boos JB, Bennett BR, Tinkham BP
Solid-State Electronics, 48(10-11), 2079, 2004
3 AlSb/InAs HEMTs with a TiW/Au gate metalization for improved stability
Boos JB, Bennett BR, Kruppa W, Park D, Mittereder J, Chang W, Turner NH
Solid-State Electronics, 47(2), 181, 2003
4 Ohmic contacts in AlSb InAs high electron mobility transistors for low-voltage operation
Boos JB, Bennett BR, Kruppa W, Park D, Mittereder J, Bass R, Twigg ME
Journal of Vacuum Science & Technology B, 17(3), 1022, 1999