검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE Turski H, Feduniewicz-Zmuda A, Sawicka M, Reszka A, Kowalski B, Krysko M, Wolny P, Smalc-Koziorowska J, Siekacz M, Muziol G, Nowakowski-Szukudlarek K, Grzanka S, Skierbiszewski C Journal of Crystal Growth, 512, 208, 2019 |
| 2 |
Indium incorporation in semipolar (20(2)over-bar1) and nonpolar (10(1)over-bar0) InGaN grown by plasma assisted molecular beam epitaxy Sawicka M, Feduniewicz-Zmuda A, Krysko M, Turski H, Muziol G, Siekacz M, Wolny P, Skierbiszewski C Journal of Crystal Growth, 459, 129, 2017 |
| 3 |
Comparative study of semipolar (20(2)over-bar1), nonpolar (10(1)over-bar0) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy Sawicka M, Wolny P, Krysko M, Turski H, Szkudlarek K, Grzanka S, Skierbiszewski C Journal of Crystal Growth, 465, 43, 2017 |
| 4 |
Growth mechanisms in semipolar (20(2)over-bar1) and nonpolar m plane (10(1)over-bar0) AlGaN/GaN structures grown by PAMBE under N-rich conditions (vol 377C, pg 184, 2013) Sawicka M, Cheze C, Turski H, Smalc-Koziorowska J, Krysko M, Kret S, Remmele T, Albrecht M, Cywinski G, Grzegory I, Skierbiszewski C Journal of Crystal Growth, 415, 176, 2015 |
| 5 |
Ti/Al ohmic contacts on AlGaN/GaN heterostructures with different defect density Greco G, Iucolano F, Bongiorno C, Giannazzo F, Krysko M, Leszczynski M, Roccaforte F Applied Surface Science, 314, 546, 2014 |
| 6 |
Growth mechanisms in semipolar (2 0 (2)over-bar 1) and nonpolar m-plane (1 0 (1)over-bar 0) AlGaN/GaN structures grown by PAMBE under N-rich conditions Sawicka M, Cheze C, Turski H, Smalc-Koziorowska J, Krysko M, Kret S, Remmele T, Albrecht M, Cywinski G, Grzegory I, Skierbiszewski C Journal of Crystal Growth, 377, 184, 2013 |
| 7 |
Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy Leszczynski M, Czernecki R, Krukowski S, Krysko M, Targowski G, Prystawko P, Plesiewicz J, Perlin P, Suski T Journal of Crystal Growth, 318(1), 496, 2011 |
| 8 |
Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy Siekacz M, Feduniewicz-Zmuda A, Cywinski G, Krysko M, Grzegory I, Krukowski S, Waldrip KE, Jantsch W, Wasilewski ZR, Porowski S, Skierbiszewski C Journal of Crystal Growth, 310(17), 3983, 2008 |
| 9 |
Growth of thin AllnN/GalnN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths Cywinski G, Skierbiszewski C, Fedunieiwcz-Zmuda A, Siekacz M, Nevou L, Doyennette L, Tchernycheva M, Julien FH, Prystawko P, Krysko M, Grzanka S, Grzegory I, Presz A, Domagala JZ, Smalc J, Albrecht M, Remmele T, Porowski S Journal of Vacuum Science & Technology B, 24(3), 1505, 2006 |
| 10 |
Defects in GaN single crystals and homoepitaxial structures Weyher JL, Kamler G, Nowak G, Borysiuk J, Lucznik B, Krysko M, Grzegory I, Porowski S Journal of Crystal Growth, 281(1), 135, 2005 |