검색결과 : 11건
No. | Article |
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1 |
Technology and application of in-situ AlOx layers on III-V semiconductors Kudela R, Soltys J, Kucera M, Stoklas R, Gucmann F, Blaho M, Micusik M, Pohorelec O, Gregor M, Brytavskyi I, Dobrocka E, Gregusova D Applied Surface Science, 461, 33, 2018 |
2 |
Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment Gregusova D, Gucmann F, Kudela R, Micusik M, Stoklas R, Valik L, Gregus J, Blaho M, Kordos P Applied Surface Science, 395, 140, 2017 |
3 |
Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape Soltys J, Kudela R, Kucera M, Elias P, Novak J, Cambel V, Vavra I, Kostic I Journal of Crystal Growth, 316(1), 67, 2011 |
4 |
AlGaAs/InGaP interfaces in structures prepared by MOVPE Kudela R, Kucera M, Dobrocka E, Soltys J Journal of Crystal Growth, 311(11), 3123, 2009 |
5 |
Anisotropy in transport properties of ordered strained InGaP Hasenohrl S, Novak J, Kudela R, Betko J, Morvic M, Fedor J Journal of Crystal Growth, 248, 369, 2003 |
6 |
Investigation of the GaAs-pyramids overgrowth using MOCVD Gregusova D, Cambel V, Kudela R, Soltys J, Kostie I, Attolini G, Pelosi C Journal of Crystal Growth, 248, 417, 2003 |
7 |
Study of narrow InGaP/(In)GaAs quantum wells Kudela R, Kucera M, Novak J, Ferrari C, Pelosi C Journal of Crystal Growth, 242(1-2), 132, 2002 |
8 |
Formation of interfaces in InGaP/GaAs/InGaP quantum wells Kudela R, Kucera M, Olejnikova B, Elias P, Hasenohrl S, Novak J Journal of Crystal Growth, 212(1-2), 21, 2000 |
9 |
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE Attolini G, Bocchi C, Germini F, Pelosi C, Parisini A, Tarricone L, Kudela R, Hasenohrl S Materials Chemistry and Physics, 66(2-3), 246, 2000 |
10 |
Schottky contacts on reactive-ion etched InGaP Kuzmik J, Darmo J, Kudela R, Hascik S, Mozolova Z Journal of Vacuum Science & Technology B, 15(6), 2016, 1997 |