화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Technology and application of in-situ AlOx layers on III-V semiconductors
Kudela R, Soltys J, Kucera M, Stoklas R, Gucmann F, Blaho M, Micusik M, Pohorelec O, Gregor M, Brytavskyi I, Dobrocka E, Gregusova D
Applied Surface Science, 461, 33, 2018
2 Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment
Gregusova D, Gucmann F, Kudela R, Micusik M, Stoklas R, Valik L, Gregus J, Blaho M, Kordos P
Applied Surface Science, 395, 140, 2017
3 Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape
Soltys J, Kudela R, Kucera M, Elias P, Novak J, Cambel V, Vavra I, Kostic I
Journal of Crystal Growth, 316(1), 67, 2011
4 AlGaAs/InGaP interfaces in structures prepared by MOVPE
Kudela R, Kucera M, Dobrocka E, Soltys J
Journal of Crystal Growth, 311(11), 3123, 2009
5 Anisotropy in transport properties of ordered strained InGaP
Hasenohrl S, Novak J, Kudela R, Betko J, Morvic M, Fedor J
Journal of Crystal Growth, 248, 369, 2003
6 Investigation of the GaAs-pyramids overgrowth using MOCVD
Gregusova D, Cambel V, Kudela R, Soltys J, Kostie I, Attolini G, Pelosi C
Journal of Crystal Growth, 248, 417, 2003
7 Study of narrow InGaP/(In)GaAs quantum wells
Kudela R, Kucera M, Novak J, Ferrari C, Pelosi C
Journal of Crystal Growth, 242(1-2), 132, 2002
8 Formation of interfaces in InGaP/GaAs/InGaP quantum wells
Kudela R, Kucera M, Olejnikova B, Elias P, Hasenohrl S, Novak J
Journal of Crystal Growth, 212(1-2), 21, 2000
9 Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE
Attolini G, Bocchi C, Germini F, Pelosi C, Parisini A, Tarricone L, Kudela R, Hasenohrl S
Materials Chemistry and Physics, 66(2-3), 246, 2000
10 Schottky contacts on reactive-ion etched InGaP
Kuzmik J, Darmo J, Kudela R, Hascik S, Mozolova Z
Journal of Vacuum Science & Technology B, 15(6), 2016, 1997