화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs
Kudina V, Garbar N, Simoen E, Claeys C
Solid-State Electronics, 105, 37, 2015
2 LKE and BGI Lorentzian noise in strained and non-strained tri-gate SOI FinFETs with HfSiON/SiO2 gate dielectric
Lukyanchikova N, Garbar N, Kudina V, Smolanka A, Simoen E, Claeys C
Solid-State Electronics, 63(1), 27, 2011
3 Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates
Lukyanchikova N, Garbar N, Kudina V, Smolanka A, Claeys C, Simoen E
Solid-State Electronics, 53(6), 613, 2009
4 High gate voltage drain current leveling off and its low-frequency noise in 65 nm fully-depleted strained and non-strained SOI nMOSFETs
LukyanchikovA N, Garbar N, Kudina V, Smolanka A, Lokshin M, Simoen E, Claeys C
Solid-State Electronics, 52(5), 801, 2008