화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Suppression of short step bunching generated on 4H-SiC Si-face substrates with vicinal off-angle
Masumoto K, Tamura K, Kudou C, Nishio J, Ito S, Kojima K, Ohno T, Okumura H
Journal of Crystal Growth, 401, 673, 2014
2 Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition
Masumoto K, Kudou C, Tamura K, Nishio J, Ito S, Kojima K, Ohno T, Okumura H
Journal of Crystal Growth, 381, 139, 2013
3 Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition (vol 381, pg 139, 2013)
Masumoto K, Kudou C, Tamura K, Nishio J, Ito S, Kojima K, Ohno T, Okumura H
Journal of Crystal Growth, 383, 172, 2013