검색결과 : 50건
No. | Article |
---|---|
1 |
Understanding the Mechanism of Electronic Defect Suppression Enabled by Nonidealities in Atomic Layer Deposition Kavrik MS, Bostwick A, Rotenberg E, Tang KC, Thomson E, Aoki T, Fruhberger B, Taur Y, McIntyre PC, Kummel AC Journal of the American Chemical Society, 142(1), 134, 2020 |
2 |
Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition Kwak I, Kavrik M, Park JH, Grissom L, Fruhberger B, Wong KT, Kang S, Kummel AC Applied Surface Science, 463, 758, 2019 |
3 |
Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) interface trap state reduction via in-situ N-2/H-2 RF downstream plasma passivation Breeden M, Wolf S, Ueda S, Fang ZW, Chang CY, Tang KC, McIntyre P, Kummel AC Applied Surface Science, 478, 1065, 2019 |
4 |
Nucleation engineering for atomic layer deposition of uniform sub-10 nm high-K dielectrics on MoTe2 Lin YS, Kwak I, Chung TF, Yang JR, Kummel AC, Chen MJ Applied Surface Science, 492, 239, 2019 |
5 |
Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers Chagarov EA, Kavrik MS, Fang ZW, Tsai W, Kummel AC Applied Surface Science, 443, 644, 2018 |
6 |
Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3 Wolf S, Edmonds M, Sardashti K, Clemons M, Park JH, Yoshida N, Dong L, Nemani S, Yieh E, Holmes R, Alvarez D, Kummel AC Applied Surface Science, 439, 689, 2018 |
7 |
Selective atomic layer deposition of MoSix on Si (001) in preference to silicon nitride and silicon oxide Choi JY, Ahles CF, Hung R, Kim N, Kummel AC Applied Surface Science, 462, 1008, 2018 |
8 |
Low temperature thermal ALD TaNx and TiNx films from anhydrous N2H4 Wolf S, Breeden M, Kwak I, Park JH, Kavrik M, Naik M, Alvarez D, Spiegelman J, Kummel AC Applied Surface Science, 462, 1029, 2018 |
9 |
Mechanically Tunable Hollow Silica Ultrathin Nanoshells for Ultrasound Contrast Agents Liberman A, Wang J, Lu N, Viveros RD, Allen CA, Mattrey RF, Blair SL, Trogler WC, Kim MJ, Kummel AC Advanced Functional Materials, 25(26), 4049, 2015 |
10 |
Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN Gu S, Chagarov EA, Min J, Madisetti S, Novak S, Oktyabrsky S, Kerr AJ, Kaufman-Osborn T, Kummel AC, Asbeck PM Applied Surface Science, 317, 1022, 2014 |