화학공학소재연구정보센터
검색결과 : 50건
No. Article
1 Understanding the Mechanism of Electronic Defect Suppression Enabled by Nonidealities in Atomic Layer Deposition
Kavrik MS, Bostwick A, Rotenberg E, Tang KC, Thomson E, Aoki T, Fruhberger B, Taur Y, McIntyre PC, Kummel AC
Journal of the American Chemical Society, 142(1), 134, 2020
2 Low interface trap density in scaled bilayer gate oxides on 2D materials via nanofog low temperature atomic layer deposition
Kwak I, Kavrik M, Park JH, Grissom L, Fruhberger B, Wong KT, Kang S, Kummel AC
Applied Surface Science, 463, 758, 2019
3 Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) interface trap state reduction via in-situ N-2/H-2 RF downstream plasma passivation
Breeden M, Wolf S, Ueda S, Fang ZW, Chang CY, Tang KC, McIntyre P, Kummel AC
Applied Surface Science, 478, 1065, 2019
4 Nucleation engineering for atomic layer deposition of uniform sub-10 nm high-K dielectrics on MoTe2
Lin YS, Kwak I, Chung TF, Yang JR, Kummel AC, Chen MJ
Applied Surface Science, 492, 239, 2019
5 Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers
Chagarov EA, Kavrik MS, Fang ZW, Tsai W, Kummel AC
Applied Surface Science, 443, 644, 2018
6 Low-temperature amorphous boron nitride on Si0.7Ge0.3(001), Cu, and HOPG from sequential exposures of N2H4 and BCl3
Wolf S, Edmonds M, Sardashti K, Clemons M, Park JH, Yoshida N, Dong L, Nemani S, Yieh E, Holmes R, Alvarez D, Kummel AC
Applied Surface Science, 439, 689, 2018
7 Selective atomic layer deposition of MoSix on Si (001) in preference to silicon nitride and silicon oxide
Choi JY, Ahles CF, Hung R, Kim N, Kummel AC
Applied Surface Science, 462, 1008, 2018
8 Low temperature thermal ALD TaNx and TiNx films from anhydrous N2H4
Wolf S, Breeden M, Kwak I, Park JH, Kavrik M, Naik M, Alvarez D, Spiegelman J, Kummel AC
Applied Surface Science, 462, 1029, 2018
9 Mechanically Tunable Hollow Silica Ultrathin Nanoshells for Ultrasound Contrast Agents
Liberman A, Wang J, Lu N, Viveros RD, Allen CA, Mattrey RF, Blair SL, Trogler WC, Kim MJ, Kummel AC
Advanced Functional Materials, 25(26), 4049, 2015
10 Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN
Gu S, Chagarov EA, Min J, Madisetti S, Novak S, Oktyabrsky S, Kerr AJ, Kaufman-Osborn T, Kummel AC, Asbeck PM
Applied Surface Science, 317, 1022, 2014