화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Large-area MoS2 deposition via MOVPE
Marx M, Nordmann S, Knoch J, Franzen C, Stampfer C, Andrzejewski D, Kummell T, Bacher G, Heuken M, Kalisch H, Vescan A
Journal of Crystal Growth, 464, 100, 2017
2 Influence of the strain on the formation of GaInAs/GaAs quantum structures
Loffler A, Reithmaier JP, Forchel A, Sauerwald A, Peskes D, Kummell T, Bacher G
Journal of Crystal Growth, 286(1), 6, 2006
3 Selective ultrahigh vacuum dry etching process far ZnSe-based II-VI semiconductors
Legge M, Bacher G, Bader S, Kummell T, Forchel A, Nurnberger J, Schumacher C, Faschinger W, Landwehr G
Journal of Vacuum Science & Technology B, 19(3), 692, 2001
4 Semimagnetic (Cd,Mn)Te single quantum dots - technological access and optical spectroscopy
Kummell T, Bacher G, Welsch MK, Eisert D, Forchel A, Konig B, Becker C, Ossau W, Landwehr G
Journal of Crystal Growth, 214, 150, 2000
5 Spin and exchange effects in CdSe/ZnSe quantum dots probed by single-dot spectroscopy
Weigand R, Seufert J, Bacher G, Kulakovskii VD, Kummell T, Forchel A, Leonardi K, Hommel D
Journal of Crystal Growth, 214, 737, 2000
6 Raman investigation of CdxZn1-xSe/ZnSe quantum wires: length dependence of the strain relaxation
Schreder B, Kummell T, Bacher G, Forchel A, Landwehr G, Materny A, Kiefer W
Journal of Crystal Growth, 214, 787, 2000
7 Resonance Raman spectroscopy and excitation profile of CdxZn1-xSe/ZnSe quantum wires
Schreder B, Kummell T, Bacher G, Forchel A, Landwehr G, Materny A, Kiefer W
Journal of Crystal Growth, 214, 792, 2000
8 Low damage thermally assisted electron cyclotron resonance etch technology for wide bandgap II-VI materials
Kummell T, Bacher G, Forchel A, Nurnberger J, Faschinger W, Landwehr G, Jobst B, Hommel D
Journal of Vacuum Science & Technology B, 15(6), 2656, 1997
9 Fabrication of Cdznse/ZnSe Quantum Dots and Quantum Wires by Electron-Beam Lithography and Wet Chemical Etching
Illing M, Bacher G, Kummell T, Forchel A, Hommel D, Jobst B, Landwehr G
Journal of Vacuum Science & Technology B, 13(6), 2792, 1995