검색결과 : 9건
No. | Article |
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1 |
Large-area MoS2 deposition via MOVPE Marx M, Nordmann S, Knoch J, Franzen C, Stampfer C, Andrzejewski D, Kummell T, Bacher G, Heuken M, Kalisch H, Vescan A Journal of Crystal Growth, 464, 100, 2017 |
2 |
Influence of the strain on the formation of GaInAs/GaAs quantum structures Loffler A, Reithmaier JP, Forchel A, Sauerwald A, Peskes D, Kummell T, Bacher G Journal of Crystal Growth, 286(1), 6, 2006 |
3 |
Selective ultrahigh vacuum dry etching process far ZnSe-based II-VI semiconductors Legge M, Bacher G, Bader S, Kummell T, Forchel A, Nurnberger J, Schumacher C, Faschinger W, Landwehr G Journal of Vacuum Science & Technology B, 19(3), 692, 2001 |
4 |
Semimagnetic (Cd,Mn)Te single quantum dots - technological access and optical spectroscopy Kummell T, Bacher G, Welsch MK, Eisert D, Forchel A, Konig B, Becker C, Ossau W, Landwehr G Journal of Crystal Growth, 214, 150, 2000 |
5 |
Spin and exchange effects in CdSe/ZnSe quantum dots probed by single-dot spectroscopy Weigand R, Seufert J, Bacher G, Kulakovskii VD, Kummell T, Forchel A, Leonardi K, Hommel D Journal of Crystal Growth, 214, 737, 2000 |
6 |
Raman investigation of CdxZn1-xSe/ZnSe quantum wires: length dependence of the strain relaxation Schreder B, Kummell T, Bacher G, Forchel A, Landwehr G, Materny A, Kiefer W Journal of Crystal Growth, 214, 787, 2000 |
7 |
Resonance Raman spectroscopy and excitation profile of CdxZn1-xSe/ZnSe quantum wires Schreder B, Kummell T, Bacher G, Forchel A, Landwehr G, Materny A, Kiefer W Journal of Crystal Growth, 214, 792, 2000 |
8 |
Low damage thermally assisted electron cyclotron resonance etch technology for wide bandgap II-VI materials Kummell T, Bacher G, Forchel A, Nurnberger J, Faschinger W, Landwehr G, Jobst B, Hommel D Journal of Vacuum Science & Technology B, 15(6), 2656, 1997 |
9 |
Fabrication of Cdznse/ZnSe Quantum Dots and Quantum Wires by Electron-Beam Lithography and Wet Chemical Etching Illing M, Bacher G, Kummell T, Forchel A, Hommel D, Jobst B, Landwehr G Journal of Vacuum Science & Technology B, 13(6), 2792, 1995 |