검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect Chena CH, Kuo JB, Chen D, Yeh CS Solid-State Electronics, 70, 3, 2012 |
| 2 |
Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device Hung HJ, Kuo JB, Chen D, Tsai CT, Yeh C Solid-State Electronics, 54(5), 609, 2010 |
| 3 |
Closed-form partitioned gate tunneling current model for NMOS devices with an ultra-thin gate oxide Lin CH, Kuo JB Solid-State Electronics, 53(11), 1191, 2009 |
| 4 |
Analysis of STI-induced mechanical stress-related Kink effect of 40 nm PD SOI NMOS devices biased in saturation region Lin IS, Su VC, Kuo JB, Chen D, Yeh CS, Tsai CT, Ma M Solid-State Electronics, 52(12), 1884, 2008 |