화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Formation of strained-silicon layer on thin relaxed-SiGe/SiO2/Si structure using SIMOX technology
Sugiyama N, Mizuno T, Takagi S, Koike M, Kurobe A
Thin Solid Films, 369(1-2), 199, 2000
2 Transport properties of two-dimensional electron gas in a strained-Si/SiGe heterostructure at low carrier densities
Hatakeyama T, Tezuka T, Sugiyama N, Kurobe A
Thin Solid Films, 369(1-2), 328, 2000
3 Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs
Tezuka T, Kurobe A, Sugiyama N, Takagi S
Thin Solid Films, 369(1-2), 338, 2000