화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor
Brunner F, Bergunde T, Richter E, Kurpas P, Achouche M, Maassdorf A, Wurfl J, Weyers M
Journal of Crystal Growth, 221, 53, 2000
2 Real-time growth monitoring of InGaAs/InP-HBT structures with reflectance anisotropy spectroscopy
Arens M, Kurpas P, Ressel P, Weyers M
Thin Solid Films, 313-314, 609, 1998
3 Monolayer Growth Oscillations and Surface-Structure of GaAs(001) During Metalorganic Vapor-Phase Epitaxy Growth
Reinhardt F, Jonsson J, Zorn M, Richter W, Ploska K, Rumberg J, Kurpas P
Journal of Vacuum Science & Technology B, 12(4), 2541, 1994