화학공학소재연구정보센터
검색결과 : 19건
No. Article
1 Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs
Debehets J, Homm P, Menghini M, Chambers SA, Marchiori C, Heyns M, Locquet JP, Seo JW
Applied Surface Science, 440, 386, 2018
2 Thermally assisted oxidation of GaSb(100) and the effect of initial oxide phases
Makela J, Tuominen M, Yasir M, Kuzmin M, Dahl J, Punkkinen MPJ, Laukkanen P, Kokko K
Applied Surface Science, 369, 520, 2016
3 Quasi in situ XPS study of electrochemical oxidation and reduction of highly oriented pyrolytic graphite in [1-ethyl-3-methylimidazolium][BF4] electrolytes
Foelske-Schmitz A, Weingarth D, Kotz R
Electrochimica Acta, 56(28), 10321, 2011
4 Nonabrupt interface related exciton energy shifts in GaN/Al(x)Gal(1-x)N quantum dots
Filho JR, Lemos V, de Sousa JS, Farias GA, Freire VN
Materials Science Forum, 338-3, 1567, 2000
5 Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy
Keister JW, Rowe JE, Kolodziej JJ, Niimi H, Tao HS, Madey TE, Lucovsky G
Journal of Vacuum Science & Technology A, 17(4), 1250, 1999
6 Infrared study of H10S10O15 chemisorbed on a Si(100)-2x1 surface
Greeley JN, Holl MMB
Inorganic Chemistry, 37(23), 6014, 1998
7 Ab initio modeling of the metal-support interface : The interaction of Ni, Pd, and Pt on MgO(100)
Lopez N, Illas F
Journal of Physical Chemistry B, 102(8), 1430, 1998
8 Surface infrared studies of silicon silicon oxide interfaces derived from hydridosilsesquioxane clusters
Greeley JN, Meeuwenberg LM, Holl MMB
Journal of the American Chemical Society, 120(31), 7776, 1998
9 Use of reactive ion sputtering to produce clean germanium surfaces in a carbon rich environment - an ion scattering study
Smentkowski VS, Holecek JC, Schultz JA, Krauss AR, Gruen DM
Journal of Vacuum Science & Technology A, 16(3), 1779, 1998
10 Interface structure between silicon and its oxide by first-principles molecular dynamics
Pasquarello A, Hybertsen MS, Car R
Nature, 396(6706), 58, 1998