검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Anisotropy of electron mobility in n-type 15R-SiC studied by Raman scattering Kurimoto E, Hangyo M, Harima H, Kisoda K, Nishiguchi T, Nishino S, Nakashima S, Katsuno M, Ohtani N Materials Science Forum, 457-460, 621, 2004 |
| 2 |
Sensitive detection of defects in alpha and beta SiC by Raman scattering Nakashima S, Nakatake Y, Ishida Y, Takahashi T, Okumura H Materials Science Forum, 389-3, 629, 2002 |
| 3 |
Raman microprobe study of carrier density profiles in modulation-doped 6H SiC Nakashima S, Nakatake Y, Yano Y, Harima H, Ohtani N, Katsuno M Materials Science Forum, 389-3, 633, 2002 |