| 1 |
UV-pretreatment- and near-infrared rapid thermal annealing-enhanced dehydrogenation for a-Si:H thin films at 400 degrees C
Ji S, Hwang CS, Jeong P, Lee S, Lee KS
Thin Solid Films, 598, 226, 2016 |
| 2 |
Polycrystalline silicon thin-film transistors fabricated by Joule-heating-induced crystallization
Hong WE, Ro JS
Solid-State Electronics, 103, 178, 2015 |
| 3 |
Pulse-width-independent low power programmable low temperature poly-Si thin-film transistor shift register
Song E, Song SJ, Nam H
Solid-State Electronics, 107, 35, 2015 |
| 4 |
Using dual plasma treatment to improve electrical characteristics and reduce flicker noise of high-kappa HfO2 LTPS-TFTs
Chang KM, Huang BW, Wu CH, Deng IC, Chang TC, Lin SC
Solid-State Electronics, 111, 7, 2015 |
| 5 |
Low power low temperature poly-Si thin-film transistor shift register with DC-type output driver
Song SJ, Kim BH, Jang J, Nam H
Solid-State Electronics, 111, 204, 2015 |
| 6 |
Bias temperature instability comparison of CMOS LTPS-TFTs with HfO2 gate dielectric
Ma WCY, Huang CY
Solid-State Electronics, 114, 115, 2015 |
| 7 |
Characteristics of various instability in Ni-FALC poly-Si thin film transistors
Jung JH, Shin JH, Cho YJ, Choi DK, Kim YB
Current Applied Physics, 11(4), S186, 2011 |
| 8 |
Thermally generated leakage current mechanisms of metal-induced laterally crystallized n-type poly-Si TFTs under hot-carrier stress
Zhu Z
Solid-State Electronics, 62(1), 62, 2011 |
| 9 |
Thermal analysis on the degradation of poly-silicon TFTs under AC stress
Weng CF, Chang TC, Tai YH, Huang ST, Wu KT, Chen CW, Kuo WC, Young TF
Materials Chemistry and Physics, 116(2-3), 344, 2009 |
| 10 |
Improvement on performance and reliability of TaN/HfO2 LTPS-TFTs with fluorine implantation
Ma MW, Chen CY, Su CJ, Wu WC, Yang TY, Kao KH, Chao TS, Lei TF
Solid-State Electronics, 52(3), 342, 2008 |
