검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Temperature distribution and heating in multiple emitter SiGeHBTs McAlister SP, McKinnon WR, Kovacic SJ, Lafontaine H Journal of Vacuum Science & Technology A, 22(3), 1031, 2004 |
| 2 |
Self-heating in multi-emitter SiGeHBTs McAlister SP, McKinnon WR, Kovacic SJ, Lafontaine H Solid-State Electronics, 48(10-11), 2001, 2004 |
| 3 |
Si/Si1-xGex photodetectors using three-dimensional growth modes to enhance photoresponse at lambda=1550 nm Janz S, Baribeau JM, Lockwood DJ, McCaffrey JP, Moisa S, Rowell NL, Xu DX, Lafontaine H, Pearson MRT Journal of Vacuum Science & Technology A, 18(2), 588, 2000 |
| 4 |
Epitaxy of Si/Si1-xGex heterostructures with very small roughness using a production-compatible ultrahigh vacuum chemical vapor deposition reactor Lafontaine H, Mason BF, Rolfe SJ, Perovic DD, Bahierathan B Journal of Vacuum Science & Technology B, 16(2), 599, 1998 |
| 5 |
Strain-induced birefringence in Si1-xGex optical waveguides Robillard M, Jessop PE, Bruce DM, Janz S, Williams RL, Mailhot S, Lafontaine H, Kovacic SJ, Ojha JJ Journal of Vacuum Science & Technology B, 16(4), 1773, 1998 |
| 6 |
X-ray scattering investigation of the interfaces in Si/Si1-xGex superlattices on Si(001) grown by MBE and UHV-CVD Baribeau JM, Lafontaine H Thin Solid Films, 321(1-2), 141, 1998 |
| 7 |
Photoluminescence in UHV-CVD-grown Si1-xGex quantum wells on Si(100) : band alignment variation with excitation density and applied uniaxial stress Rowell NL, Aers GC, Lafontaine H, Williams RL Thin Solid Films, 321(1-2), 158, 1998 |
| 8 |
Formation of thin gate oxides on SiGe with atomic oxygen Ogryzlo EA, Zheng L, Heinrich B, Myrtle K, Lafontaine H Thin Solid Films, 321(1-2), 196, 1998 |
| 9 |
Characterization of Si1-xGex Epilayers Grown Using a Commercially Available Ultrahigh-Vacuum Chemical-Vapor-Deposition Reactor Lafontaine H, Houghton DC, Elliot D, Rowell NL, Baribeau JM, Laframboise S, Sproule GI, Rolfe SJ Journal of Vacuum Science & Technology B, 14(3), 1675, 1996 |
| 10 |
Fabrication of 150-nm Gate-Length High-Electron-Mobility Transistors Using X-Ray-Lithography Haghirigosnet AM, Lafontaine H, Jin Y, Rousseaux F, Chaker M, Pepin H, Launois H Journal of Vacuum Science & Technology B, 12(6), 3970, 1994 |