검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVD Suresh S, Lourdudoss S, Landgren G, Baskar K Journal of Crystal Growth, 312(21), 3151, 2010 |
| 2 |
Surface morphology and localised states of GaInNAs single quantum wells grown by MOVPE Baskar K, Sundgren P, Douheret O, Landgren G Journal of Crystal Growth, 248, 431, 2003 |
| 3 |
Defect density in non-selective and selective Si/SiGe structures Menon C, Bentzen A, Landgren G, Radamson HH Journal of Crystal Growth, 237, 259, 2002 |
| 4 |
A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget Grahn JV, Fosshaug H, Jargelius M, Jonsson P, Linder M, Malm BG, Mohadjeri B, Pejnefors J, Radamson HH, Sanden M, Wang YB, Landgren G, Ostling M Solid-State Electronics, 44(3), 549, 2000 |
| 5 |
Compositional variations in strain-compensated InGaAsP InAsP superlattices studied by scanning tunneling microscopy Grandidier B, Feenstra RM, Silfvenius C, Landgren G Journal of Vacuum Science & Technology A, 17(4), 2251, 1999 |
| 6 |
Trimethylamine: Novel source far low damage reactive ion beam etching of InP Carlstrom CF, Anand S, Landgren G Journal of Vacuum Science & Technology B, 17(6), 2660, 1999 |
| 7 |
Extremely smooth surface morphologies in N-2/H-2/CH4 based low energy chemically assisted ion beam etching of InP GaInAsP Carlstrom CF, Anand S, Landgren G Thin Solid Films, 343-344, 374, 1999 |
| 8 |
Low energy ion beam etching of InP using methane chemistry Carlstrom CF, Landgren G, Anand S Journal of Vacuum Science & Technology B, 16(3), 1018, 1998 |
| 9 |
Morphological and Compositional Variations in Strain-Compensated InGaAsP/InGaP Superlattices Goldman RS, Feenstra RM, Silfvenius C, Stalnacke B, Landgren G Journal of Vacuum Science & Technology B, 15(4), 1027, 1997 |