화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether)
Standaert TEFM, Matsuo PJ, Li X, Oehrlein GS, Lu TM, Gutmann R, Rosenmayer CT, Bartz JW, Langan JG, Entley WR
Journal of Vacuum Science & Technology A, 19(2), 435, 2001
2 Ion energy distributions and optical emission spectra in NF3-based process chamber cleaning plasmas
Hsueh HP, McGrath RT, Ji B, Felker BS, Langan JG, Karwacki EJ
Journal of Vacuum Science & Technology B, 19(4), 1346, 2001
3 C2F6/O-2 and C3F8/O-2 plasmas SiO2 etch rates, impedance analysis, and discharge emissions
Entley WR, Hennessy WJ, Langan JG
Electrochemical and Solid State Letters, 3(2), 99, 2000
4 Gas utilization in remote plasma cleaning and stripping applications
Kastenmeier BEE, Oehrlein GS, Langan JG, Entley WR
Journal of Vacuum Science & Technology A, 18(5), 2102, 2000
5 Silicon etching in NF3/O-2 remote microwave plasmas
Matsuo PJ, Kastenmeier BEE, Oehrlein GS, Langan JG
Journal of Vacuum Science & Technology A, 17(5), 2431, 1999
6 Evaluation of trifluoroacetic anhydride as an alternative plasma enhanced chemical vapor deposition chamber clean chemistry
Pruette LC, Karecki SM, Reif R, Langan JG, Rogers SA, Ciotti RJ, Felker BS
Journal of Vacuum Science & Technology A, 16(3), 1577, 1998
7 Remote plasma etching of silicon nitride and silicon dioxide using NF3/O-2 gas mixtures
Kastenmeier BEE, Matsuo PJ, Oehrlein GS, Langan JG
Journal of Vacuum Science & Technology A, 16(4), 2047, 1998
8 Electrical impedance analysis and etch rate maximization in NF3/Ar discharges
Langan JG, Rynders SW, Felker BS, Beck SE
Journal of Vacuum Science & Technology A, 16(4), 2108, 1998
9 Electrical optimization of plasma-enhanced chemical vapor deposition chamber cleaning plasmas
Sobolewski MA, Langan JG, Felker BS
Journal of Vacuum Science & Technology B, 16(1), 173, 1998