화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 LaLuO3 higher-kappa dielectric integration in SOI MOSFETs with a gate-first process
Nichau A, Ozben ED, Schnee M, Lopes JMJ, Besmehn A, Luysberg M, Knoll L, Habicht S, Mussmann V, Luptak R, Lenk S, Rubio-Zuazo J, Castro GR, Buca D, Zhao QT, Schubert J, Mantl S
Solid-State Electronics, 71, 19, 2012
2 Effect of oxygen on tuning the TiNx metal gate work function on LaLuO3
Mitrovic IZ, Przewlocki HM, Piskorski K, Simutis G, Dhanak VR, Sedghi N, Hall S
Thin Solid Films, 520(23), 6959, 2012