검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Characterization for N- and P-type 3C-SiC on Si (100) substrate with thermal anneal and pulsed excimer laser anneal Lee KY, Chang YH, Huang YH, Huang CF, Chung CY, Zhao F Applied Surface Science, 266, 46, 2013 |
| 2 |
Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology Nguyen ND, Rosseel E, Takeuchi S, Everaert JL, Yang L, Goossens J, Moussa A, Clarysse T, Richard O, Bender H, Zaima S, Sakai A, Loo R, Lin JC, Vandervorst W, Caymax M Thin Solid Films, 518, S48, 2010 |
| 3 |
Dopant diffusion and activation induced by sub-melt laser anneal within the co-implanted p plus polycrystalline silicon gate used in CMOS technologies Colin A, Morin P, Beneyton R, Pinzelli L, Mathiot D, Fogarassy E Thin Solid Films, 518(9), 2390, 2010 |
| 4 |
Characterization of boron carbon nitride film modified by excimer laser annealing Aoki H, Ohyama K, Sota H, Seino T, Kimura C, Sugino T Applied Surface Science, 254(2), 596, 2007 |
| 5 |
Substrate effect on excimer laser assisted crystal growth in phosphor Ca0.997Pr0.002TiO3 polycrystalline thin films Nakajima T, Tsuchiya T, Kumagai T Applied Surface Science, 254(4), 884, 2007 |