검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Base Metallization Stability in InP/InGaAs Heterojunction Bipolar-Transistors and Its Influence on Leakage Currents Caffin D, Besombes C, Bresse JF, Legay P, Leroux G, Patriarche G, Launay P Journal of Vacuum Science & Technology B, 15(4), 854, 1997 |
| 2 |
(NH4)(2)S-X Preepitaxial Treatment for GaAs Chemical Beam Epitaxy Regrowth Sik H, Driad R, Legay P, Juhel M, Harmand JC, Launay P, Alexandre F Journal of Vacuum Science & Technology B, 14(1), 147, 1996 |
| 3 |
High-Stability Heterojunction Bipolar-Transistors with Carbon-Doped Base Grown by Atomic Layer Chemical Beam Epitaxy Driad R, Alexandre F, Juhel M, Launay P Journal of Vacuum Science & Technology B, 14(6), 3509, 1996 |