검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first? Le Louarn A, Vezian S, Semond F, Massies J Journal of Crystal Growth, 311(12), 3278, 2009 |
| 2 |
Selective epitaxial growth of AlN and GaN nanostructures on Si(111) by using NH3 as nitrogen source Vezian S, Le Louarn A, Massies J Journal of Crystal Growth, 303(2), 419, 2007 |