검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Cathodoluminescence mapping and selective etching of defects in bulk GaN Lu H, Cao XA, LeBoeuf SF, Hong HC, Kaminsky EB, Arthur SD Journal of Crystal Growth, 291(1), 82, 2006 |
| 2 |
Optimization of the active region of InGaN/GaN 405 nm light emitting diodes using statistical design of experiments for determination of interaction effects Grandusky JR, Jamil M, Shahedipour-Sandvik F, DeLuca JA, LeBoeuf SF, Cao XA, Arthur SD Journal of Vacuum Science & Technology B, 23(4), 1576, 2005 |
| 3 |
Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm Cao XA, Yan CH, D'Evelyn MP, LeBoeuf SF, Kretchmer JW, Klinger R, Arthur SD, Merfeld DW Journal of Crystal Growth, 269(2-4), 242, 2004 |
| 4 |
Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes Cao XA, LeBoeuf SF, Kim KH, Sandvik PM, Stokes EB, Ebong A, Walker D, Kretchmer J, Lin JY, Jiang HX Solid-State Electronics, 46(12), 2291, 2002 |