검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers Leem SJ, Shin YC, Kim KC, Kim EH, Sung YM, Moon Y, Hwang SM, Kim TG Journal of Crystal Growth, 311(1), 103, 2008 |
| 2 |
Rapid relaxation of crystallographic anisotropy in SiO2-removed lateral epitaxial overgrown GaN layers Kim MH, Choi YH, Yi JH, Yang M, Jeon J, Khym SW, Leem SJ Journal of Crystal Growth, 236(1-3), 95, 2002 |
| 3 |
Effects of N+-implanted sapphire (0001) substrate on GaN epilayer Cho YS, Koh EK, Park YJ, Koh D, Kim EK, Moon Y, Leem SJ, Kim G, Byun D Journal of Crystal Growth, 236(4), 538, 2002 |
| 4 |
A selective growth of III-nitride by MOCVD for a buried-ridge type structure Yang M, Cho M, Kim C, Yi J, Jeon J, Khym S, Kim M, Choi Y, Leem SJ, Lee YH Journal of Crystal Growth, 226(1), 73, 2001 |
| 5 |
GaN 완충층 두께가 GaN 에피층의 특성에 미치는 영향 조용석, 고의관, 박용주, 김은규, 황성민, 임시종, 변동진 Korean Journal of Materials Research, 11(7), 575, 2001 |