검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Comparison of the structure and electrical properties of thermal and plasma grown oxides on GaAs Lefebvre PR, Lai L, Irene EA Journal of Vacuum Science & Technology B, 16(3), 996, 1998 |
| 2 |
Study of the mechanisms of GaN film growth on GaAs surfaces by thermal and plasma nitridation Losurdo M, Capezzuto P, Bruno G, Lefebvre PR, Irene EA Journal of Vacuum Science & Technology B, 16(5), 2665, 1998 |
| 3 |
Spectroscopic immersion ellipsometry study of SiO2-Si interface roughness for electron cyclotron resonance plasma and thermally oxidized Si surfaces Zhao C, Lefebvre PR, Irene EA Thin Solid Films, 313-314, 286, 1998 |
| 4 |
An in situ and ex situ ellipsometry comparison of the interfaces of Si and GaAs resulting from thermal and plasma oxidation Lefebvre PR, Zhao C, Irene EA Thin Solid Films, 313-314, 454, 1998 |
| 5 |
Comparison of Si and GaAs/Interfaces Resulting from Thermal and Plasma Oxidation Lefebvre PR, Irene EA Journal of Vacuum Science & Technology B, 15(4), 1173, 1997 |