검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Novel approach for n-type doping of HVPE gallium nitride with germanium Hofmann P, Krupinski M, Habel F, Leibiger G, Weinert B, Eichler S, Mikolajick T Journal of Crystal Growth, 450, 61, 2016 |
| 2 |
Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN Semmelroth K, Berwian P, Schroter C, Leibiger G, Schonleber M, Friedrich J Journal of Crystal Growth, 427, 99, 2015 |
| 3 |
Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN Meissner E, Schweigard S, Friedrich J, Paskova T, Udwary K, Leibiger G, Habel F Journal of Crystal Growth, 340(1), 78, 2012 |
| 4 |
Intrinsic carbon doping of (AlGa)As for (InGa)As laser structures (lambda approximate to 1.17 mu m) Gottschalch V, Leibiger G, Benndorf G, Herrnberger H, Spemann D Journal of Crystal Growth, 272(1-4), 642, 2004 |
| 5 |
Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers Leibiger G, Krahmer C, Bauer J, Herrnberger H, Gottschalch V Journal of Crystal Growth, 272(1-4), 732, 2004 |
| 6 |
Hydrogen implantation in InGaNAs studied by spectroscopic ellipsometry Leibiger G, Gottschalch V, Razek N, Schindler A, Schubert M Thin Solid Films, 455-56, 231, 2004 |
| 7 |
MOVPE growth of BxGa1-xAs, BxGa1-x-yInyAs, and BxAl1-xAs alloys on (001) GaAs Gottschalch V, Leibiger G, Benndorf G Journal of Crystal Growth, 248, 468, 2003 |